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| Power Transistors 2SD1446 Silicon NPN triple diffusion planar type Darlington For power amplification 0.70.1 Unit: mm 10.00.2 5.50.2 2.70.2 4.20.2 4.20.2 7.50.2 s Features q q q 4.0 High foward current transfer ratio hFE High collector to base voltage VCBO Full-pack package which can be installed to the heat sink with one screw (TC=25C) Ratings 500 400 5 10 6 40 2 150 -55 to +150 Unit V V V A A W C C 16.70.3 3.10.1 1.40.1 1.30.2 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 14.00.5 0.5 -0.1 0.80.1 +0.2 2.540.25 5.080.5 1 2 1:Base 2:Collector 3:Emitter TO-220 Full Pack Package(a) 3 Internal Connection C B s Electrical Characteristics Parameter Collector cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency E (TC=25C) Symbol ICBO VCEO(sus) VEBO hFE VCE(sat) VBE(sat) fT * Conditions VCB = 350V, IE = 0 IC = 2A, L = 10mH IE = 0.1A, IC = 0 VCE = 2V, IC = 2A IC = 3A, IB = 0.06A IC = 3A, IB = 0.06A VCE = 10V, IC = 1A, f = 1MHz min typ max 100 Unit A V V 400 5 500 1.5 2.5 15 V V MHz *V CEO(sus) Test circuit X L 10mH 50/60Hz mercury relay 120 6V 1 15V Y G 1 Power Transistors PC -- Ta 80 5 (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) Without heat sink (PC=2.0W) TC=25C IB=8mA 2SD1446, 2SD1446A IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) 100 IC/IB=50 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 VCE(sat) -- IC Collector power dissipation PC (W) 70 60 50 40 30 20 10 0 0 20 40 (2) (3) (1) Collector current IC (A) 4 3 4.0mA 3.5mA 3.0mA 2.5mA 2.0mA 25C TC=100C -25C 2 1 1.5mA 0 60 80 100 120 140 160 0 1 2 3 4 5 6 0.1 0.3 1 3 10 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) -- IC 100 100000 30000 hFE -- IC 104 Cob -- VCB Collector output capacitance Cob (pF) VCE=2V IE=0 f=1MHz TC=25C 103 Base to emitter saturation voltage VBE(sat) (V) IC/IB=50 30 10 3 1 25C 0.3 0.1 0.03 0.01 0.01 0.03 TC=-25C 100C Forward current transfer ratio hFE 10000 3000 1000 300 100 25C 30 -25C 0.1 0.3 1 3 10 TC=100C 102 10 0.1 0.3 1 3 10 10 0.01 0.03 1 0.1 0.3 1 3 10 30 100 Collector current IC (A) Collector current IC (A) Collector to base voltage VCB (V) Area of safe operation (ASO) 100 30 102 Non repetitive pulse TC=25C ICP t=10s IC DC 1ms Rth(t) -- t (1) Without heat sink (2) With a 100 x 100 x 2mm Al heat sink (1) Thermal resistance Rth(t) (C/W) Collector current IC (A) (2) 10 10 3 1 0.3 0.1 0.03 0.01 1 1 10-1 3 10 30 100 300 1000 10-2 10-4 10-3 10-2 10-1 1 10 102 103 104 Collector to emitter voltage VCE (V) Time t (s) 2 This datasheet has been download from: www..com Datasheets for electronics components. |
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